TY - JOUR
T1 - Conduction and Resistive Switching in Dropcast CdTe/CdSe Core-Shell Quantum Dots Embedded Chitosan Composite
AU - Dlamini, Zolile Wiseman
AU - Vallabhapurapu, Sreedevi
AU - Daramola, Olamide Abiodan
AU - Tseki, Potlaki Foster
AU - Krause, Rui Werner Macedo
AU - Siwe-Noundou, Xavier
AU - Mahule, Tebogo Sfiso
AU - Vallabhapurapu, Srinivasu Vijaya
N1 - Publisher Copyright:
© 2022, Shiraz University.
PY - 2022/4
Y1 - 2022/4
N2 - We report on conduction and resistive switching in devices consisting of chitosan dispersed with CdTe/CdSe core-shell quantum dots (QDs) active layers sandwiched between silver (Ag) and indium doped tin oxide (ITO) electrodes. Active layers consisting of 0.96wt%, 0.48wt%, 0.32wt% and 0.24wt% QDs to chitosan were deposited on the ITO surface using the cost-free drop cast method. The electrical study performed on all devices revealed ‘O-type’ memory behaviour with OFF-state current conduction mechanism attributed to hopping mechanism. On the other hand, the ON-state current in each device followed a unique mechanism, such that Ohmic behaviour was observed for the device with 0.96wt%, while linear then hopping, space-charge limited, and lastly, hopping conductions mechanisms were attributed to devices with 0.48wt%, 0.32wt% and 0.24wt%, respectively. Our results show that these devices’ memory behaviour and conduction can be exploited by controlling the amount of CdTe/CdSe in the chitosan medium.
AB - We report on conduction and resistive switching in devices consisting of chitosan dispersed with CdTe/CdSe core-shell quantum dots (QDs) active layers sandwiched between silver (Ag) and indium doped tin oxide (ITO) electrodes. Active layers consisting of 0.96wt%, 0.48wt%, 0.32wt% and 0.24wt% QDs to chitosan were deposited on the ITO surface using the cost-free drop cast method. The electrical study performed on all devices revealed ‘O-type’ memory behaviour with OFF-state current conduction mechanism attributed to hopping mechanism. On the other hand, the ON-state current in each device followed a unique mechanism, such that Ohmic behaviour was observed for the device with 0.96wt%, while linear then hopping, space-charge limited, and lastly, hopping conductions mechanisms were attributed to devices with 0.48wt%, 0.32wt% and 0.24wt%, respectively. Our results show that these devices’ memory behaviour and conduction can be exploited by controlling the amount of CdTe/CdSe in the chitosan medium.
KW - CdTe/CdSe
KW - Chitosan
KW - Hopping conduction mechanism
KW - O-Type memory behaviour
KW - Resistive switching
UR - https://www.scopus.com/pages/publications/85126257423
U2 - 10.1007/s40995-022-01272-y
DO - 10.1007/s40995-022-01272-y
M3 - Article
AN - SCOPUS:85126257423
SN - 1028-6276
VL - 46
SP - 709
EP - 716
JO - Iranian Journal of Science and Technology, Transaction A: Science
JF - Iranian Journal of Science and Technology, Transaction A: Science
IS - 2
ER -