Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN

H. A. Vasco; T. T. Hlatshwayo; S. V. Motloung; M. Mlambo; B. S. Mwankemwa; S. Petrovic; V. A. Skuratov

doi:10.1016/j.vacuum.2019.01.054

Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN

H. A. Vasco, T. T. Hlatshwayo^*, S. V. Motloung, M. Mlambo, B. S. Mwankemwa, S. Petrovic, V. A. Skuratov

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Sintered TiN were implanted with Xe ions of 360 keV to a fluence of 1.1 × 10 ¹⁶ cm ⁻² at room temperature (RT) and others were co-irradiated with Xe ions of 167 MeV to a fluence of 3.4 × 10 ¹⁴ cm ⁻² and Xe ions of 360 keV to a fluence of 1.1 × 10 ¹⁶ cm ⁻² also at RT, successively. Both samples were isochronally annealed at temperatures ranging from 1100 to 1500 °C. Both irradiations caused no amorphization of the sintered TiN, however more defects were retained in the samples implanted with only Xe (360 keV) ions. Annealing of defects retained after irradiations were found to be faster in the co-irradiated samples. The migration behavior of implanted Xe was explained by trapping and de-trapping by defects at temperatures below 1200 °C while at temperatures above 1200 °C, it was dominated by grain boundary diffusion, in the un-irradiated samples. In the co-irradiated samples, Xe migrated via fast grain boundaries.

Original language	English
Pages (from-to)	59-68
Number of pages	10
Journal	Vacuum
Volume	163
DOIs	https://doi.org/10.1016/j.vacuum.2019.01.054
Publication status	Published - May 2019
Externally published	Yes

Keywords

Irradiation
Raman spectroscopy
SPS
Swift heavy ions
TiN

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10.1016/j.vacuum.2019.01.054

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@article{194871c075d5413e9cd61528fcf651d8,

title = "Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN",

abstract = " Sintered TiN were implanted with Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 at room temperature (RT) and others were co-irradiated with Xe ions of 167 MeV to a fluence of 3.4 × 10 14 cm −2 and Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 also at RT, successively. Both samples were isochronally annealed at temperatures ranging from 1100 to 1500 °C. Both irradiations caused no amorphization of the sintered TiN, however more defects were retained in the samples implanted with only Xe (360 keV) ions. Annealing of defects retained after irradiations were found to be faster in the co-irradiated samples. The migration behavior of implanted Xe was explained by trapping and de-trapping by defects at temperatures below 1200 °C while at temperatures above 1200 °C, it was dominated by grain boundary diffusion, in the un-irradiated samples. In the co-irradiated samples, Xe migrated via fast grain boundaries.",

keywords = "Irradiation, Raman spectroscopy, SPS, Swift heavy ions, TiN",

author = "Vasco, {H. A.} and Hlatshwayo, {T. T.} and Motloung, {S. V.} and M. Mlambo and Mwankemwa, {B. S.} and S. Petrovic and Skuratov, {V. A.}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier Ltd",

year = "2019",

month = may,

doi = "10.1016/j.vacuum.2019.01.054",

language = "English",

volume = "163",

pages = "59--68",

journal = "Vacuum",

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T1 - Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN

AU - Vasco, H. A.

AU - Hlatshwayo, T. T.

AU - Motloung, S. V.

AU - Mlambo, M.

AU - Mwankemwa, B. S.

AU - Petrovic, S.

AU - Skuratov, V. A.

PY - 2019/5

Y1 - 2019/5

N2 - Sintered TiN were implanted with Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 at room temperature (RT) and others were co-irradiated with Xe ions of 167 MeV to a fluence of 3.4 × 10 14 cm −2 and Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 also at RT, successively. Both samples were isochronally annealed at temperatures ranging from 1100 to 1500 °C. Both irradiations caused no amorphization of the sintered TiN, however more defects were retained in the samples implanted with only Xe (360 keV) ions. Annealing of defects retained after irradiations were found to be faster in the co-irradiated samples. The migration behavior of implanted Xe was explained by trapping and de-trapping by defects at temperatures below 1200 °C while at temperatures above 1200 °C, it was dominated by grain boundary diffusion, in the un-irradiated samples. In the co-irradiated samples, Xe migrated via fast grain boundaries.

AB - Sintered TiN were implanted with Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 at room temperature (RT) and others were co-irradiated with Xe ions of 167 MeV to a fluence of 3.4 × 10 14 cm −2 and Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 also at RT, successively. Both samples were isochronally annealed at temperatures ranging from 1100 to 1500 °C. Both irradiations caused no amorphization of the sintered TiN, however more defects were retained in the samples implanted with only Xe (360 keV) ions. Annealing of defects retained after irradiations were found to be faster in the co-irradiated samples. The migration behavior of implanted Xe was explained by trapping and de-trapping by defects at temperatures below 1200 °C while at temperatures above 1200 °C, it was dominated by grain boundary diffusion, in the un-irradiated samples. In the co-irradiated samples, Xe migrated via fast grain boundaries.

KW - Irradiation

KW - Raman spectroscopy

KW - SPS

KW - Swift heavy ions

KW - TiN

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U2 - 10.1016/j.vacuum.2019.01.054

DO - 10.1016/j.vacuum.2019.01.054

M3 - Article

AN - SCOPUS:85061330532

SN - 0042-207X

VL - 163

SP - 59

EP - 68

JO - Vacuum

JF - Vacuum

ER -

Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN

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Keywords

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