Silver (Ag) ions of 360 keV were implanted into polycrystalline SiC to a fluence of 2 × 1016 cm−2 at room temperature. Some of the as-implanted samples were irradiated with xenon (Xe) ions of 167 MeV to a fluence of 3.4 × 1014 cm−2 at room temperature. After implantation, the un-irradiated and irradiated samples were isochronally annealed at temperatures ranging from 1100 to 1500 °C in steps of 100 °C for 5 h. The as-implanted, irradiated and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), Raman spectroscopy, transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Implantation of Ag at room temperature amorphized the SiC near surface implanted region, while swift heavy ion (SHI) irradiation of the as-implanted samples caused some limited recrystallization of the amorphized layer. Migration of implanted Ag was already taking place at 1100 °C in the irradiated samples while no Ag migrate for the un-irradiated sample annealed at the same temperature. These difference in the migration behavior of Ag is due to the difference in microstructure in the two samples. Irradiated samples had fine crystals with the presence of pores in the surface after annealing at 1100 °C. The pores led to the loss of about 70% of Ag from the surface. While un-irradiated samples had relatively larger crystals with less loss of silver. Decomposition of SiC were observed after annealing at 1500 °C in both samples. The results show that more Ag was released in the irradiated SiC samples.
|Number of pages
|Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
|Published - 15 Dec 2019