Effect of swift heavy ions irradiation in the migration of silver implanted into polycrystalline SiC

H. A.A. Abdelbagi; V. A. Skuratov; S. V. Motloung; E. G. Njoroge; M. Mlambo; J. B. Malherbe; J. H. O'Connell; T. T. Hlatshwayo

doi:10.1016/j.nimb.2019.10.002

Effect of swift heavy ions irradiation in the migration of silver implanted into polycrystalline SiC

H. A.A. Abdelbagi, V. A. Skuratov, S. V. Motloung, E. G. Njoroge, M. Mlambo, J. B. Malherbe, J. H. O'Connell, T. T. Hlatshwayo^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Silver (Ag) ions of 360 keV were implanted into polycrystalline SiC to a fluence of 2 × 10¹⁶ cm⁻² at room temperature. Some of the as-implanted samples were irradiated with xenon (Xe) ions of 167 MeV to a fluence of 3.4 × 10¹⁴ cm⁻² at room temperature. After implantation, the un-irradiated and irradiated samples were isochronally annealed at temperatures ranging from 1100 to 1500 °C in steps of 100 °C for 5 h. The as-implanted, irradiated and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), Raman spectroscopy, transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Implantation of Ag at room temperature amorphized the SiC near surface implanted region, while swift heavy ion (SHI) irradiation of the as-implanted samples caused some limited recrystallization of the amorphized layer. Migration of implanted Ag was already taking place at 1100 °C in the irradiated samples while no Ag migrate for the un-irradiated sample annealed at the same temperature. These difference in the migration behavior of Ag is due to the difference in microstructure in the two samples. Irradiated samples had fine crystals with the presence of pores in the surface after annealing at 1100 °C. The pores led to the loss of about 70% of Ag from the surface. While un-irradiated samples had relatively larger crystals with less loss of silver. Decomposition of SiC were observed after annealing at 1500 °C in both samples. The results show that more Ag was released in the irradiated SiC samples.

Original language	English
Pages (from-to)	201-209
Number of pages	9
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	461
DOIs	https://doi.org/10.1016/j.nimb.2019.10.002
Publication status	Published - 15 Dec 2019
Externally published	Yes

Keywords

RBS
SHI
SiC
Structure

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10.1016/j.nimb.2019.10.002

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Abdelbagi, H. A. A., Skuratov, V. A., Motloung, S. V., Njoroge, E. G., Mlambo, M., Malherbe, J. B., O'Connell, J. H., & Hlatshwayo, T. T. (2019). Effect of swift heavy ions irradiation in the migration of silver implanted into polycrystalline SiC. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 461, 201-209. https://doi.org/10.1016/j.nimb.2019.10.002

@article{af7869084e7b42bfb8bf024a061210ac,

title = "Effect of swift heavy ions irradiation in the migration of silver implanted into polycrystalline SiC",

abstract = "Silver (Ag) ions of 360 keV were implanted into polycrystalline SiC to a fluence of 2 × 1016 cm−2 at room temperature. Some of the as-implanted samples were irradiated with xenon (Xe) ions of 167 MeV to a fluence of 3.4 × 1014 cm−2 at room temperature. After implantation, the un-irradiated and irradiated samples were isochronally annealed at temperatures ranging from 1100 to 1500 °C in steps of 100 °C for 5 h. The as-implanted, irradiated and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), Raman spectroscopy, transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Implantation of Ag at room temperature amorphized the SiC near surface implanted region, while swift heavy ion (SHI) irradiation of the as-implanted samples caused some limited recrystallization of the amorphized layer. Migration of implanted Ag was already taking place at 1100 °C in the irradiated samples while no Ag migrate for the un-irradiated sample annealed at the same temperature. These difference in the migration behavior of Ag is due to the difference in microstructure in the two samples. Irradiated samples had fine crystals with the presence of pores in the surface after annealing at 1100 °C. The pores led to the loss of about 70% of Ag from the surface. While un-irradiated samples had relatively larger crystals with less loss of silver. Decomposition of SiC were observed after annealing at 1500 °C in both samples. The results show that more Ag was released in the irradiated SiC samples.",

keywords = "RBS, SHI, SiC, Structure",

author = "Abdelbagi, {H. A.A.} and Skuratov, {V. A.} and Motloung, {S. V.} and Njoroge, {E. G.} and M. Mlambo and Malherbe, {J. B.} and O'Connell, {J. H.} and Hlatshwayo, {T. T.}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = dec,

day = "15",

doi = "10.1016/j.nimb.2019.10.002",

language = "English",

volume = "461",

pages = "201--209",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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publisher = "Elsevier",

}

Abdelbagi, HAA, Skuratov, VA, Motloung, SV, Njoroge, EG, Mlambo, M, Malherbe, JB, O'Connell, JH & Hlatshwayo, TT 2019, 'Effect of swift heavy ions irradiation in the migration of silver implanted into polycrystalline SiC', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 461, pp. 201-209. https://doi.org/10.1016/j.nimb.2019.10.002

Effect of swift heavy ions irradiation in the migration of silver implanted into polycrystalline SiC. / Abdelbagi, H. A.A.; Skuratov, V. A.; Motloung, S. V. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 461, 15.12.2019, p. 201-209.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of swift heavy ions irradiation in the migration of silver implanted into polycrystalline SiC

AU - Abdelbagi, H. A.A.

AU - Skuratov, V. A.

AU - Motloung, S. V.

AU - Njoroge, E. G.

AU - Mlambo, M.

AU - Malherbe, J. B.

AU - O'Connell, J. H.

AU - Hlatshwayo, T. T.

PY - 2019/12/15

Y1 - 2019/12/15

N2 - Silver (Ag) ions of 360 keV were implanted into polycrystalline SiC to a fluence of 2 × 1016 cm−2 at room temperature. Some of the as-implanted samples were irradiated with xenon (Xe) ions of 167 MeV to a fluence of 3.4 × 1014 cm−2 at room temperature. After implantation, the un-irradiated and irradiated samples were isochronally annealed at temperatures ranging from 1100 to 1500 °C in steps of 100 °C for 5 h. The as-implanted, irradiated and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), Raman spectroscopy, transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Implantation of Ag at room temperature amorphized the SiC near surface implanted region, while swift heavy ion (SHI) irradiation of the as-implanted samples caused some limited recrystallization of the amorphized layer. Migration of implanted Ag was already taking place at 1100 °C in the irradiated samples while no Ag migrate for the un-irradiated sample annealed at the same temperature. These difference in the migration behavior of Ag is due to the difference in microstructure in the two samples. Irradiated samples had fine crystals with the presence of pores in the surface after annealing at 1100 °C. The pores led to the loss of about 70% of Ag from the surface. While un-irradiated samples had relatively larger crystals with less loss of silver. Decomposition of SiC were observed after annealing at 1500 °C in both samples. The results show that more Ag was released in the irradiated SiC samples.

AB - Silver (Ag) ions of 360 keV were implanted into polycrystalline SiC to a fluence of 2 × 1016 cm−2 at room temperature. Some of the as-implanted samples were irradiated with xenon (Xe) ions of 167 MeV to a fluence of 3.4 × 1014 cm−2 at room temperature. After implantation, the un-irradiated and irradiated samples were isochronally annealed at temperatures ranging from 1100 to 1500 °C in steps of 100 °C for 5 h. The as-implanted, irradiated and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), Raman spectroscopy, transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Implantation of Ag at room temperature amorphized the SiC near surface implanted region, while swift heavy ion (SHI) irradiation of the as-implanted samples caused some limited recrystallization of the amorphized layer. Migration of implanted Ag was already taking place at 1100 °C in the irradiated samples while no Ag migrate for the un-irradiated sample annealed at the same temperature. These difference in the migration behavior of Ag is due to the difference in microstructure in the two samples. Irradiated samples had fine crystals with the presence of pores in the surface after annealing at 1100 °C. The pores led to the loss of about 70% of Ag from the surface. While un-irradiated samples had relatively larger crystals with less loss of silver. Decomposition of SiC were observed after annealing at 1500 °C in both samples. The results show that more Ag was released in the irradiated SiC samples.

KW - RBS

KW - SHI

KW - SiC

KW - Structure

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U2 - 10.1016/j.nimb.2019.10.002

DO - 10.1016/j.nimb.2019.10.002

M3 - Article

AN - SCOPUS:85073019917

SN - 0168-583X

VL - 461

SP - 201

EP - 209

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Effect of swift heavy ions irradiation in the migration of silver implanted into polycrystalline SiC

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