This study presents undoped and terbium doped ZnSe thin films deposited at different terbium III (Tb3+) ion concentrations using Photo-assisted chemical bath technique. The samples were characterized using glancing incidence X-ray diffraction (GIXRD), Raman spectroscopy, ultraviolet-visible spectroscopy, and photoluminescence (PL) spectroscopy, field emission scanning electron microscope, Atomic force microscopy and energy dispersive X-ray spectroscopy. The GIXRD and Raman peaks intensities, surface roughness and energy band gap increased with increasing Tb3+ ions concentration up to 0.8% and decreased thereafter. This behavior, which is equally observed in the PL emission, is ascribed to concentration quenching due to the presence of natural defect in the host material. Three PL emission peaks all associated with the defects were observed at 535, 672 and 743 nm. The thin films morphology transformed from flakes to spherical grains with increased Tb3+ ions concentration and the presence of the expected elements was confirmed. The deposited films have potential applications in light emitting devices.
- Doped terbium ions
- Photo-assisted chemical bath deposition
- Thin films
- Zinc selenide