Migration behaviour of Europium implanted into single crystalline 6H-SiC

T. M. Mohlala, T. T. Hlatshwayo*, M. Mlambo, E. G. Njoroge, S. V. Motloung, J. B. Malherbe

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Migration behaviour of Europium (Eu) implanted into 6H-SiC was investigated using Rutherford backscattering spectroscopy (RBS), RBS in a channelling mode (RBS-C) and scanning electron microscopy (SEM). Eu ions of 360 keV were implanted into 6H-SiC at 600 °C to a fluence of 1 × 1016 cm−2. The implanted samples were sequentially annealed at temperatures ranging from 1000 to 1400 °C, in steps of 100 °C for 5 h. RBS-C showed that implantation of Eu into 6H-SiC at 600 °C retained crystallinity with some radiation damage. Annealing of radiation damage retained after implantation already took place after annealing at 1000 °C. This annealing of radiation damage progressed with increasing annealing temperature up to 1400 °C. A shift of Eu towards the surface took place after annealing at 1000 °C. This shift became more pronounced and was accompanied by loss of Eu from the surface at annealing temperatures >1000 °C. This shift was accompanied by broadening of Eu peak/Fickian diffusion after annealing at temperatures >1100 °C. The migration of Eu occurring concurrently with the annealing of radiation damage was explained by trapping and de-trapping of Eu by radiation damage.

Original languageEnglish
Pages (from-to)130-134
Number of pages5
JournalVacuum
Volume141
DOIs
Publication statusPublished - 1 Jul 2017

Keywords

  • Diffusion
  • RBS
  • RBS-C
  • Radiation damage
  • SiC

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