Resistive Switching in CdTe/CdSe Core-Shell Quantum Dots Embedded Chitosan-Based Memory Devices

Zolile Wiseman Dlamini, Sreedevi Vallabhapurapu, Olamide Abiodun Daramola, Potlaki Foster Tseki, Rui Werner Macedo Krause, Xavier Siwe-Noundou, Tebogo Sfiso Mahule*, Srinivasu Vijaya Vallabhapurapu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


In this paper, we report on the resistive switching (RS) and conduction mechanisms in devices consisting of CdTe/CdSe core-shell quantum dots embedded chitosan composites active layer. Two devices with active layers sandwiched between (1) Al and Ag, and (2) ITO and Ag electrodes were studied. Both devices exhibited bipolar memory behavior with VSET=+1.32 V and VRESET=-0.92V, for the Al-based device, while VSET=+0.70 V and VRESET=-0.82V were observed for the ITO-based device, enabling both devices to be operated at low powers. However, the switching mechanisms of both devices were different, i.e., RS in Al device was attributed to conductive bridge mechanism, while space-charge-limited driven conduction filament attributed the switching mechanism of the ITO device. Additionally, the Al-based device showed long retention (>103s) and a reasonable large (≥103) ON/OFF ratio. Additionally, for this device, we also observed sweeping cycle-induced reversal of voltage polarity of the VSET and VRESET. In contrast, we observed that increasing sweeping cycles resulted in an exponential decrease of the OFF-state resistance of the ITO-based device.

Original languageEnglish
Article number2250113
JournalJournal of Circuits, Systems and Computers
Issue number6
Publication statusPublished - 1 Apr 2022
Externally publishedYes


  • CdTe/CdSe
  • Resistive switching
  • bipolar switching


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